Etching Time Effect on Photoluminescence, Porosity, Surface Morphology and Conductivity of Porous Silicon

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dc.contributor.authorChan Kok Sheng
dc.contributor.authorWan M. Khairul Wan Mohamed Zin
dc.contributor.authorDwight Tham Jern Ee
dc.contributor.authorMohd Ikmar Nizam Mohamad Isa
dc.contributor.authorMohd Faiz Hassan
dc.date.accessioned2017-04-11T03:31:52Z
dc.date.available2017-04-11T03:31:52Z
dc.date.issued2016
dc.description.abstractRecently, porous silicon (PS) gains a lot of research interest with its potential applications in optoelectronics, flat panel displays technology, and chemical sensor. In this work, PS was chemically etched on p-type silicon (Si) wafer by hydrofluoric acid (HF) with 40% nitric acid (HNO3) concentration at different etching time. The PS has porosity dependent on etching time in the range (38-60) % that gives orange-red photoluminescence (PL) between 657 nm to 661 nm. The PL intensity increases and the peak wavelength shows slight blue shift as etching time increases. The energy gap obtained are higher than pure Si (1.11eV). Meanwhile, the conductivity of the PS decreases as the porosity and energy gap increase.en_US
dc.identifier.citationVol. 3 No. 1en_US
dc.identifier.urihttp://hdl.handle.net/123456789/5683
dc.language.isoenen_US
dc.publisherEDUCATUM Journal of Science, Mathematics and Technology (EJSMT)en_US
dc.subjectporous siliconen_US
dc.subjectchemical etchingen_US
dc.subjectphotoluminescenceen_US
dc.subjectenergy gapen_US
dc.subjectconductivityen_US
dc.titleEtching Time Effect on Photoluminescence, Porosity, Surface Morphology and Conductivity of Porous Siliconen_US
dc.typeArticleen_US
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