Please use this identifier to cite or link to this item: http://umt-ir.umt.edu.my:8080/handle/123456789/7097
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dc.contributor.authorN. SOIN, D-
dc.contributor.authorABD HADI-
dc.date.accessioned2017-10-04T04:50:42Z-
dc.date.available2017-10-04T04:50:42Z-
dc.date.issued2007-
dc.identifier.urihttp://hdl.handle.net/123456789/7097-
dc.description.abstractThis paper presents the comparative study of the short channel effects on both conventional and lightly doped drain (LDD) pMOSFETs. This includes the parametric study of both structures in order to determine the profile of the threshold voltage and leakage current due to the short channel effects. In this study, two critical parameters of the short channel devices were investigated including the channel length (L) and the oxide thicknesses (Tax). The significant effects were observed in the device especially on the leakage current mechanism includes substrate and drain currents when these two critical parameters have been scaled down. Apart from that, the influence of device processing parameters namely, source/drain ion implantation dose on the leakage current mechanism had been investigated.en_US
dc.language.isoenen_US
dc.publisherJournal of Sustainability Science and Managementen_US
dc.subjectShort channel effecten_US
dc.subjectleakage currenten_US
dc.subjectPMOSFETen_US
dc.subjectlightly doped drainen_US
dc.subjectChannel lengthen_US
dc.subjectoxide thicknessesen_US
dc.titleA SIMULATION STUDY OF SHORT CHANNEL EFFECTS IN CONVENTIONAL AND LIGHTLY –DOPED-DRAIN (LDD) P-MOSFETSen_US
dc.typeArticleen_US
Appears in Collections:Journal Articles

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