Please use this identifier to cite or link to this item: http://umt-ir.umt.edu.my:8080/handle/123456789/7079
Title: A RAPID JUSTIFICATION OF HEMT DEVICE STRUCTURES BASED ON A THREE-PROBE CONTACT TECHNIQUE
Authors: H.SOETEDJO
I.SABTU
M.R.YAHYA
A.F.AWANG MAT
Issue Date: 2007
Publisher: Journal of Sustainability Science and Management
Abstract: Various characteristics of the pHEMT structures have been investigated using a three-probe contact technique. This measurement is considerably new as from the epitaxial layer (sample) prior to the actual device completion; the justification of current-voltage characteristics of transistor device could be done. This justification could lead to reducing time-and cost when poor sample is found. Among the three different samples of pHEMTs of AlGaAs / InGaAs, the current -voltage characterization has shown that the structure with a larger channel thickness (26nm) shows greater saturation current and breakdown voltage.
URI: http://hdl.handle.net/123456789/7079
Appears in Collections:Journal Articles

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