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http://umt-ir.umt.edu.my:8080/handle/123456789/7079
Title: | A RAPID JUSTIFICATION OF HEMT DEVICE STRUCTURES BASED ON A THREE-PROBE CONTACT TECHNIQUE |
Authors: | H.SOETEDJO I.SABTU M.R.YAHYA A.F.AWANG MAT |
Issue Date: | 2007 |
Publisher: | Journal of Sustainability Science and Management |
Abstract: | Various characteristics of the pHEMT structures have been investigated using a three-probe contact technique. This measurement is considerably new as from the epitaxial layer (sample) prior to the actual device completion; the justification of current-voltage characteristics of transistor device could be done. This justification could lead to reducing time-and cost when poor sample is found. Among the three different samples of pHEMTs of AlGaAs / InGaAs, the current -voltage characterization has shown that the structure with a larger channel thickness (26nm) shows greater saturation current and breakdown voltage. |
URI: | http://hdl.handle.net/123456789/7079 |
Appears in Collections: | Journal Articles |
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