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dc.contributor.authorTham, Dwight Jern Ee-
dc.date.accessioned2014-05-18T06:43:31Z-
dc.date.available2014-05-18T06:43:31Z-
dc.date.issued2011-09-
dc.identifier.urihttp://dspace.psnz.umt.edu.my/xmlui/handle/123456789/3010-
dc.description.abstractIn past decades, silicon is commonly used in the semiconductor industry. Recently, researcher extensively studied the porous silicon produced by electrochemical etching because there is possibility to develop a new approach in developing optoelectronic devices, solar cell and sensor. In this research, the Porous Silicon (PS) was fabricated by chemical etching method on the P-type silicon wafer in the mixture of hydrofluoric acid (HF) etchant with different concentration of nitric acid(HN03) of 20%, 40%, 65% and at different etching time of 5, 10, 15, 20, 25 minutes.en_US
dc.language.isoenen_US
dc.publisherTerengganu: Universiti Malaysia Terengganuen_US
dc.subjectQC 6118 .S5 T4 2011en_US
dc.subjectTham, Dwight Jern Eeen_US
dc.subjectTesis FST 2011en_US
dc.subjectPorous siliconen_US
dc.titleSurface morphology, optical and electrical properties of porous silicon produced by chemical etchingen_US
dc.typeThesisen_US
Appears in Collections:Fakulti Sains dan Teknologi

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