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http://umt-ir.umt.edu.my:8080/handle/123456789/7079Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | H.SOETEDJO | - |
| dc.contributor.author | I.SABTU | - |
| dc.contributor.author | M.R.YAHYA | - |
| dc.contributor.author | A.F.AWANG MAT | - |
| dc.date.accessioned | 2017-10-04T04:47:15Z | - |
| dc.date.available | 2017-10-04T04:47:15Z | - |
| dc.date.issued | 2007 | - |
| dc.identifier.uri | http://hdl.handle.net/123456789/7079 | - |
| dc.description.abstract | Various characteristics of the pHEMT structures have been investigated using a three-probe contact technique. This measurement is considerably new as from the epitaxial layer (sample) prior to the actual device completion; the justification of current-voltage characteristics of transistor device could be done. This justification could lead to reducing time-and cost when poor sample is found. Among the three different samples of pHEMTs of AlGaAs / InGaAs, the current -voltage characterization has shown that the structure with a larger channel thickness (26nm) shows greater saturation current and breakdown voltage. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Journal of Sustainability Science and Management | en_US |
| dc.title | A RAPID JUSTIFICATION OF HEMT DEVICE STRUCTURES BASED ON A THREE-PROBE CONTACT TECHNIQUE | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Journal Articles | |
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